Effect of Hydrostatic Pressure on the Revers Gate-Current of AlGaN/GaN HEMTs

In this paper, we present an Analytical-Numerical model for reverse gate leakage current in AlGaN/GaN high electron mobility transistors (HEMTs), which investigate the influence of hydrostatic pressure (HP) on gate-current. Salient features are incorporated occupied sub-bands interface quantum well, combined with a self-consistent solution Schrödinger and Poisson equations. Finite difference techniques have been used to acquire energy eigenvalues their corresponding eigenfunctions (HEMTs). It has found that bound charge at heterointerface most impact threshold voltage. The increases cause increase With increasing HP, Schottky barrier height decreases, AlGaN electric field increased. HP acts as positive virtual gate. dependence Poole- Frenkel emission (FP) Fowler-Nordheim (FN) direct tunneling is more than trap-assisted-tunneling (TAT). Increasing 2GPa, intersection point PF TAT varies by 1 volt, average 35%, voltage 1.15 V absolute terms.